To meet the stringent safety requirements for hot-swapping in AI servers and telecommunications equipment, SGT MOSFETs must provide both a stable linear operating mode and low on-state resistance. In response to this demand, SiNESEMI has introduced a series of 100V-rated linear SGT MOSFETs that effectively address this technical requirement.
This product series integrates the advantages of trench-based technologies—offering low on-state resistance—with planar-based technologies that provide a wide Safe Operating Area (SOA), all within an innovative structural design. In parallel configurations, these MOSFETs demonstrate superior current-sharing performance and robustness against transient surge currents, making them particularly well-suited for high-surge-current applications.
By effectively suppressing high surge currents, SiNESEMI's linear SGT MOSFETs ensure reliable protection for load devices. These components provide an optimal solution for applications such as hot-swapping, eFuse (electronic fuse) implementation, battery protection circuits, and high-power motor drives, across a wide range of systems including communication base stations, data center servers, and battery management systems (BMS).
Features
● Low on-resistance
● Excellent FOM
● Low Cgd/Cgs ratio (0.41%)
● Low thermal resistance
Applications
● 48V hot plugging application
● Electronic circuit breaker (e-fuse) protection
● Circuit soft start
● High-power motor BMS charge/discharge protection
Products
Cross Reference