Power semiconductor products, which utilize micro-groove field-stop IGBT/SiC MOS low power loss chips with highly reliable HF3/HF5/HB2/HB3 packages, enhance energy conversion efficiency and system reliability in energy storage and support both string and centralized storage systems.
The 650V/1100V/1200V IGBTs optimized for energy storage applications achieve ultra-low dynamic and static losses.
high-performance and reliable planar 1200V SiC MOS, combined with low-loss IGBTs, enables the energy storage efficiency to reach over 99% .
The improved HB2 and HB3 packages have a long-term operating junction temperature as high as 175℃.
Optimal product solutions (packaging optimization & chip configuration) have been tailored to suit specific applications and overload requirements.
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