Low conduction & switching losses; enhanced current sharing; stronger impact resistance; lower voltage spikes; better EMI performance.Industry-leading low RDS(ON) and FOMg; VGS(th) grading for better parallel operation; wide SOA; TJmax175℃; enhanced internal RC snubber circuit; linearized Crss Miller characteristics; low Crss/Ciss.
Ultra-low RDS(ON) (as low as x mΩ level) significantly reduces conduction losses.
The optimized FOMg quality factor significantly improves the switching performance.
The wide SOA secure workspace has an extremely strong shock resistance.
Enhanced endogenous RC snubber circuit.
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