With the growing global focus on environmental protection and the rapid deployment of electric vehicles, the development of high-performance and high-safety Battery Management Systems (BMS) has become a key priority in the industry. BMS intelligently optimizes the charging / discharging processes and significantly improves energy utilization efficiency.
MOSFETs in BMS handle overcurrent, overcharge, discharge, and overtemperature protection. During overcurrent protection, with a low circuit resistance of 100mΩ, the short-circuit currents can reach thousands of amperes, which requires the MOSFET to be turned off within 1ms. This high di/dt imposes stringent demands on the device’s impact resistance. SiNESEMI optimizes MOSFET parameters such as SOA, UIS, di/dt tolerance and RthJC to best meet the BMS technical requirements.
Optimized gate driver design.
Wide SOA secure workspace.
Optimized RthJC enhances heat dissipation performance.
Ultra-low RDS(ON), optimized Qg to reduce drive loss.

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