| Testing Items | Testing Standards | Testing Equipments | Testing Capabilities | Testing Purposes |
| PV | MIL-STD-750 | DTS-1000 (Tester) 4220MR (Teperature Charmber) | Test temperature range：-65℃ ~ 175℃ Maximum test voltage：2000V Maximum test current：1000A | Performance tests simulating high and low temperatures determine if a device’s working state under extreme conditions meets design requirements, ensuring its normal operation and preventing performance decline or functional failure. |
| ESD | AEC-Q101-001 (HBM) | HCE-5000 | Maximum test voltage：8000V | Evaluate a device’s anti-static capability, provide customers with anti-static grade reference, ensure its normal operation under static discharge, and prevent static-induced equipment failure and damage. |
| AEC-Q101-005 (CDM) | C5000R | Maximum test voltage：1500V | ||
| TR | JESD51-14 | Phase12 | Rthja，Rthjc，Zthjc | Thermal resistance is a parameter measuring heat transfer ease within a device, whose magnitude directly affects the MOSFET’s temperature rise and performance. Evaluating and optimizing device heat dissipation ensures stable high-temperature operation and extends service life. |
| UIS | AEC-Q101-004 (Section 2) | ITC75100 | Maximum test current ：400A Avalanche clamp voltage：10V ~ 2500V Test inductance： 0.01mH ~ 79.9mH | Simulating MOSFETs’ behavior under extreme voltage helps customers understand their performance in high-voltage environments, ensuring stability and safety in practical applications. |
| Ciss/Coss/Crss | MIL-STD-750 (Method: 3431,3433,3453) | B1506A | Test frequency: 100KHz ~ 10MHz Test voltage: 0~1200V | Measuring MOSFETs’ capacitance characteristics reveals their capacitance variation under different working conditions, thus optimizing clients’ application circuit design and ensuring efficient circuit operation. |
| Qg | MIL-STD-750 (Method: 3471.1) | B1506A | Test voltage: 0~1200V Maximum output current：150A Maximum driving current：200mA | Gate charge quantity evaluates the performance and efficiency of power devices (MOSFETs, IGBTs), especially switching loss and speed. |
| Ton/Toff | MIL-STD-750 (Method: 3472.2) | QDT-1200 | Test voltage: 0~2000V Maximum output current：150A Maximum time measurement accuracy：0.1ns | Switching characteristic testing evaluates device performance in practical applications (e.g., turn-on response speed, turn-off delay time, dead time), ensuring reliability and efficiency in high-frequency switching applications. |
| Trr/Qrr | MIL-STD-750 (Method: 3473.1) | QDT-1200 | Test voltage: 0~2000V Maximum output current：150A The maximum rate of change of current：1000A/us | Reverse recovery characteristic testing evaluates MOSFETs’ switching frequency and efficiency. In high-frequency switching applications, shorter Trr reduces switching losses and EMI, enhancing system stability and reliability; while larger Qrr lowers efficiency, increases MOSFET heat generation, and impairs device output performance. |
| DI | AEC-Q101-004 (Section 3) | E36106 | Test voltage: 0~100V Maximum output current：0.4A Maximum output power：40W | Conducting DI tests on MOSFETs guarantees their stable, reliable performance, enhancing overall production efficiency and product quality. Additionally, DI test data provides important references for subsequent process improvement and design optimization, helping manufacturers identify problems timely, make adjustments, and reduce production losses. |
| Testing Items | Testing Standards | Testing Equipments | Testing Capabilities | Testing Purposes |
| HTGB | JESD22-A108 | ES-PDSHGB | Maximum test temperature：175℃ Maximum test voltage：60V Current monitoring accuracy：1.0nA | This test determines the influence of bias conditions and high temperatures on solid-state devices over time, via accelerated simulation of their working conditions. |
| HTRB | MIL-STD-750D (M1038) | ES-PDSHRB | Maximum test temperature：175℃ Maximum test voltage：2000V Current monitoring accuracy：0.01uA | This test determines the influence of bias conditions and high temperatures on solid-state devices over time, via accelerated simulation of their working conditions. |
| HAST | JESD22-A110 | ES-PDSMHA | Test temperature range：105℃ ~ 150℃ Test humidity range：65%RH ~ 100%RH Current monitoring accuracy：0.1uA | This test evaluates the reliability of non-airtight packaged solid-state devices in a humid environment. |
| UHAST | JESD22-A118 | ER-04JA | Test temperature range：25℃ ~ 150℃ Test humidity range：25%RH ~ 98%RH | This test evaluates the reliability of non-airtight packaged solid-state devices in a humid environment. |
| H3TRB | JESD22-A101 | ES-PDSMRB | Test temperature range：25℃ ~ 150℃ Test humidity range：25%RH ~ 98%RH Current monitoring accuracy：0.1uA | This test evaluates the reliability of non-airtight packaged solid-state devices in a humid environment. |
| PCT/AC | JESD22-A102 | PC-242HS-A | Test temperature range：100℃ ~ 134℃ Test humidity range：85%RH ~ 100%RH | This test evaluates the moisture resistance and strength of new packaging forms or existing packaging with modified materials/designs. |
| TCT | JESD22-A104 | TS-120SW | Test temperature range：-70℃ ~ 200℃ Low-temperature heating rate：≥2℃/min Low-temperature cooling rate：≥5℃/min High-temperature heating rate：≥10℃/min | This test is used to determine the ability of devices exposed to alternating high and low temperature environments. |
| HTSL | JESD22-A103 | PH201T | Maximum test temperature：200℃ Temperature stability accuracy：±2.0℃ | This test is used to determine the influence of time and temperature on the thermal excitation failure mechanism of solid-state electronic devices, and the failure distribution at a certain moment under storage conditions. |
| IOL | MIL-STD-750D (M1037) | CS-PDSNPC | Tc detection temperature： room temperature ~ 200℃ Single-station current≤500mA The maximum power output at a single workstation＞20W | This test simulates the device’s operating temperature range (from room temperature to maximum junction temperature) and uneven temperature gradients inside the package and between package and substrate, thereby confirming the performance of the device’s various materials and interfaces. |
| Reflow | JEDEC J-STD-020 | BV-RF8845L | Number of temperature zones: 8 temperature zones at the top and bottom respectively Maximum temperature: 400℃ Temperature accuracy: ±1.0℃ | This test ensures welding quality and stability, and avoids mechanical damage and performance problems. |
| Solderability | JEDEC J-STD-002 | BK205 | Test temperature range: 200℃ ~ 600℃ | This test evaluates the tin absorption capacity of product pins. |
| Equipment Name | Model | Characteristics | Purpose |
| Low-power optical microscope | SMASP004T | Magnification: 60X-300X | Check device appearance and morphology |
| Curve analysis instrument | Tektronix 370B | A source with an upper limit of 2000V or a current of 10A For a 1nA measurement resolution, click the cursor | Check device static electrical property to confirm its electrical state and prepare for subsequent physical analysis |
| X-Ray transmission machine | Dage 7500VR | Scanning area: 508mm*445mm Rotation Angle: 65°/ Resolution: 0.95um | Check device internal soldering (for large bubbles, solder or foreign object bridging) |
| Ultrasonic scanning microscope | 日立 Fine SAT Ⅲ | Obtain images of defects such as internal pores, cracks and delamination of semiconductors using non-destructive ultrasonic waves | Check device chip’s internal bonding/surface bonding and pin bonding delamination |
| Fume hood/heating furnace /OM microscope | General exhaust acid and alkali cabinet/HP-05 Ceramic closed constant temperature furnace/Olympus -BX53 | Metallographic microscope, with high sensitivity and clear imaging | Chemical cap opening/layer removal analysis/inspection |
| Grinding machine | NANO 1000T GRINDER-POLISHER | 8/10 inch diameter, rotational speed: 0-1000rpm | Observe device internal conditions and joint cross-sectional morphology |
| InGaAs | Hamamatsu PHEMOS-1000 | InGaAs shares the same detection principle as micro-light-level microscopy (EMMI): both detect photons excited by electron-hole binding and thermal carriers. The difference is InGaAs detects a longer wavelength range (~900-1600nm, vs. EMMI’s 350-1100nm) and supports external power supply. | Identify uA-level leakage failure and locate defects |
| OBIRCH | Hamamatsu PHEMOS-1000-5X0262-15GS92 | Optical Beam Induced Resistance Change (OBIRCH) is detected via laser scanning of the chip’s surface (front/back). During chip functional testing, it scans the chip’s internal connections to generate a temperature gradient (causing resistance changes); by comparing these changes, it locates the chip’s Hot Spot defects. | Main target: short circuit/high leakage current failure to locate defects |
| Thermal | DCG ELITE | Defect location can be directly identified via the device’s front and back; besides, failure points can be located as Die or package-related issues before cover opening. The main principle is using a highly sensitive InSb detector to detect thermal radiation distribution from defects when the device is powered on, thus confirming the fault point location. | Generally for uA-level leakage current or micro-short circuit failure |
| DB-FIB | DB-FIB Helios-660/G5 | Ultra-high resolution ion beam-equipped Dual Beam FIB can locate and observe nanoscale fine structures in samples; its fast cutting speed effectively shortens data acquisition time. | Electron beam observes sample cross-section (profile); plus EDX composition analysis |
Products
Cross Reference