SiNESEMI has released the TOLL-packaged 120V SGT MOSFET SMT12T01AHTL: 1.35mΩ/ N-channel)_Product News_SiNESEMI (Shanghai) Co., Ltd. 

HOME Newsroom Product News SiNESEMI has released the TOLL-packaged 120V SGT MOSFET SMT12T01AHTL: 1.35mΩ/ N-channel)
SiNESEMI has released the TOLL-packaged 120V SGT MOSFET SMT12T01AHTL: 1.35mΩ/ N-channel)
Product News
2024.12.15

SiNESEMl has released the 120V-Toll-packaged MOSFET- SMT12TO1AHTL. The device has industry-leading ultra-low on-impedance and electrical performance, demonstrating high efficiency, high reliability and high stability in high -power-density, high-current applications such as electric vehicles, drones, electric motorcycles, electric bicycles, battery protection and communication power suppliesand has been verified by several benchmark customers to enter mass production.

 

SiNESEMl adheres to high quality, focuses on innovation, and sustainably builds technology leadershipdifferentiation, high efficiency and high added value, constantly creating Sinesemi 'unique' value for ourcustomers! The mass production of SMT12T01AHTL provides eficient supply support, helps customers expandtheir high-performance solutions, and collaborates to create another "shared win-win" success case

 

As the trend of automotive electrification accelerates, 48V systems for vehicles are attracting much attentionfrom automakers. Based on its technological advantages, Zhongjing Xinyuan is constantly expanding itsautomotive-grade product layout and will introduce 80-120V TOLL automotive-grade products, providingmore efficient, safer and lower-cost solutions for 48V [DC/DC], Power Train (Motor Driver)l applications.


Leading Edge 120V SGT MOSFET in TOLL Package

This 393A, 120V/N channel power MOSFET, with wide SOA, strong avalanche capability and extremely low on.state resistance (Rosow_w, 1.35m 2 ), along with fast switching capability (0, only 135nc), can significantlyreduce system power loss and meet increasingly strict energy efficiency standards.

The SMT12T01AHTL successfully combines low on-resistance with high current-carrying capacity, furtherbringing the highest power density to high-reliability, high -efficiency applications, while also reducing thenumber of MOSFETs for high-current applications, achieving greater overcurrent capacity with fewer devicesthus saving overall system costs.