SiNESEMI’s high-performance MOSFETs enhance the efficiency of drones_Product News_SiNESEMI (Shanghai) Co., Ltd. 

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SiNESEMI’s high-performance MOSFETs enhance the efficiency of drones
Product News
2025.01.12

SiNESEMI has introduced a series of SGT MOSFETs designed to deliver industry-leading performance, high cost-effectiveness, and stringent reliability testing for drone application solutions. 

Leveraging its extensive technical expertise and innovation capabilities in this domain, the company offers tailored power management solutions to meet the demanding requirements of modern drone systems.


High Power Density & High Current-Carrying Capacity: Heavy-duty drones demand high motor power output, necessitating MOSFETs with both high current-carrying capacity and high power density. 

These characteristics enable the reduction of overall system size while maintaining optimal performance.


Low On-Resistance & High-Speed Switching: MOSFETs with low on-resistance significantly reduce conduction losses, thereby improving system efficiency and extending flight endurance. 

Additionally, their fast switching characteristics ensure rapid response times for motor control signals, which is essential for achieving precise control and stable flight performance.


High-Current Rapid Turn-Off: During acceleration, deceleration, or in the event of motor lock-up, the current through the MOSFET can surge instantaneously. 

To ensure system reliability and prevent equipment stalling, these MOSFETs are engineered with a wide Safe Operating Area (SOA) and the ability to rapidly turn off under high-current conditions.


To address the stringent requirements for efficiency, safety, and reliability in drone applications, SiNESEMI recommends its 30–150V MOSFET portfolio, which achieves an optimal balance of key electrical parameters. 

These devices are specifically designed to minimize on-resistance while maintaining low gate charge (Qg), thereby enhancing overall system performance.


When Vgs = 10V, this series provides an on-resistance range of 0.43mΩ to 3.4mΩ, with Figure of Merit (FOM) values ranging from 48 to 330. 

Based on the specific requirements of customer applications, appropriate device selections can be made to ensure robust and reliable operation.

 

Key Features

● Low on-resistance

● Low Qg

● Low Trr/Qrr

● Excellent FOM

● Wide SOA